WIRING CONNECTING STRUCTURE OF SEMICONDUCTOR DEVICE AND ITS PRODUCTION

摘要

PURPOSE:To provide stable via hole resistance and improve reliability far the connecting structure for multi-layer aluminum wiring by promoting interface mixing between aluminum wiring layers and improving the coating of a connecting hole part on the top layer of the aluminum wiring layer. CONSTITUTION:A first aluminum wiring layer 4 is electrically connected to a second aluminum wiring layer 100 through a connecting hole 6. The second aluminum wiring layer 100 is provided with a titanium film 101, a titanium nitride film 102 and an aluminum alloy film 104. The connecting hole 6 is filled with tungsten plug 103. On the surface of the first aluminum wiring layer 4, a tungsten film 312 is formed. The titanium film 101 is brought into contact with a tungsten film 312 through the connecting hole 6.