| 摘要 |
PURPOSE:To manufacture the title semiconductor device at high access velocity by a method wherein an insulating film is formed facing to the semiconductor impurity diffused region corresponding to a semiconductor substrate and a wiring for decreasing the junction charge capacity in the diffused region. CONSTITUTION:The title semiconductor device is composed of a semiconductor substrate 1, a semiconductor diffused region 3 corresponding to the wiring formed on a specific part of the semiconductor substrate 1 and an insulating film 10 formed facing to the PN junction surface 4 of the semiconductor substrate 1 and the semiconductor impurity diffused region 3. In such a constitution, the insulating film 10 is formed on the PN junction surface so that the junction charge capacity may be decreased for accelerating the shifting step of electrons in the wiring thereby enabling the title semiconductor device at high access velocity to be manufactured. |
