| 摘要 |
PURPOSE:To provide a structure of a power MOSFET chip which can increase heat radiation capacity and is suitable for power HIC use. CONSTITUTION:When a source electrode 6 is vapor-deposited on an insulative oxide film 3 of a power MOSFET chip 1, a heat sink metal layer 14 insulated from the source electrode 6 is formed by masking at a part. In the case of storing a ceramic substrate 8 with the same chip 1 mounted into an HIC case 11, another heat radiation route can be formed by bonding this heat sink metal layer 14 to the inner face of the case 11 with a thick wire 15. This structure can attain a marked increase in heat radiation capacity. |
