| 摘要 |
PURPOSE:To provide a semiconductor integrated circuit device which effectively absorbs a surge input to a MOS semiconductor integrated circuit device and has a protective circuit having high electrostatic breakdown strength and high latchup resistance. CONSTITUTION:A resistance (r<3>+r<4>) between a source terminal S(n) of an NMOS transistor TN for constituting part of a protective circuit of a MOS semiconductor integrated circuit device and a P-type substrate terminal Sub(p) is smaller than a resistance (r<3>+r<5>) between the terminal S(n) and a ground terminal GND. |
