发明名称 |
RECTIFYING SEMICONDUCTOR DEVICE |
摘要 |
PURPOSE:To provide a rectifying semiconductor device which is lessened in reverse leakage current up to a high reverse voltage region without being deteriorated in forward voltage drop characteristics. CONSTITUTION:A rectifying semiconductor device is composed of a one conductivity type semiconductor N, a metal layer M, and a second one conductivity type semiconductor layer PEL interposed between the semiconductor N and the metal layer M, where the second one conductivity type semiconductor PEL layer is made to retain nearly the same electron potential as a Schottky barrier height by the one conductivity type semiconductor N and the metal layer M to serve as a Potential Equalized Layer(PEL). |
申请公布号 |
JPH05110061(A) |
申请公布日期 |
1993.04.30 |
申请号 |
JP19910295148 |
申请日期 |
1991.10.15 |
申请人 |
SHINDENGEN ELECTRIC MFG CO LTD |
发明人 |
WAKATABE MASARU;ISHIDA JUNICHI |
分类号 |
H01L29/872;H01L29/47;H01L29/861 |
主分类号 |
H01L29/872 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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