| 摘要 |
<p>PURPOSE:To prevent uneven etching of a resist and deterioration of characteristics as a shifter by successively subjecting the resist to development, irradiation with far UV and etching. CONSTITUTION:The resist 2 is patterned with electron beams 1 and developed to form a resist pattern. The entire surface of the resulting mask is irradiated with far UV 5 and the light shielding film 3 is over-etched to form a shifter part 6. Since the resist 2 is hardened by irradiation with far UV 5, it is prevented from sagging at the shifter part 6 and an etching soln. penetrates easily between the resist 2 and the glass substrate 4, accordingly uniform dimensions of the shifter part 6 and a satisfactory edge shape of the light, shielding film 3 can be ensured.</p> |
