| 摘要 |
In order to subject a workpiece, such as a semiconductor wafer, to elevated pressures the workpiece is enclosed in a void (16) between two enclosure parts (6, 7) which have been forced together by upper and lower actuators (12, 13). The enclosure parts (6, 7) are themselves enclosed in a vacuum chamber (1) evacuatable by a vacuum pumping system. Gas is then supplied from a suitable pressure source via a pipe (17) into void (10), thereby to subject the workpiece to elevated pressure. Heating means may be provided to permit the workpiece to be subject to elevated temperature. |
