| 摘要 |
<p>A self-aligned process for forming an electrical contact (20) to the substrate (10) of a semiconductor structure is disclosed. The electrical contact (20) is between a conductive polycrystalline layer (38) and a region (42) in the substrate (10). The width of the electrical contact (20) is self-aligned. The self-aligned process involves undercutting the region (A, B) underneath the conductive polycrystalline layer (38), filling it with a polycrystalline silicon material (20) and driving the dopant from the conductive polycrystalline layer (38) into the filled polycrystalline silicon to form the contact (20) with the region (42).</p> |
