| 摘要 |
A P-channel transistor has a drain electrode (12), a source electrode (13), a gate electrode (16) and a bulk electrode (14). The drain and source electrodes (12, 13) form p-zones in an N-trough (10) and the trough (10) itself is embedded in a surrounding P-zone. The bulk electrode is at the same time the trough connection and is connected to the source electrode (13), whereas the drain electrode (12) is connected to the positive pole (U<+>) of the operating voltage. This arrangement reliably ensures resistance to change of polarity, only negligible leakage currents flow even at higher temperatures, and only a trough (10), upon which further components may be housed, is required.
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