| 摘要 |
<p>A device (10) for generating a programming voltage (Vp) for a programmable non-volatile memory, particularly of EPROM type, from an external DC voltage source (Vpp) comprises means (TA, TB, R1, R2, R3) for generating a reference voltage (Vs). Said device (10) also comprises means (20) for duplicating the said reference voltage (Vs), said means being arranged as a voltage and current mirror structure, and generating the programming voltage (Vp) at the output. The device also comprises an MOS follower transistor (12) having its drain and source connected to the external DC voltage source (Vpp) and to the output of said duplication means (20) respectively, and having its gate connected to a predetermined internal node (N) of the said reference voltage generating means (TA, TB, R1, R2, R2). For use in microelectronics, particularly for EPROM.</p> |
