MOS-controlled thyristor with emitter surface loss compensation - has auxiliary emitter regions in base layer under gate electrode between individual thyristor cells or groups

摘要

The MCT has spaces (12) left between individual MOS-controlled cells (MC) or clusters to compensate for losses at the emitter surface by virtue of the arrangement of auxiliary emitter regions (13) on the cathode side. These are heavily n-doped and let into the second base layer (8) without being connected to the cathode contact (2). This base layer (8) extends to the cathode surface between the auxiliary emitter region (13) and the cell (MC), covered by the gate electrode (4). USE/ADVANTAGE - For motor speed control etc. The switch-off current density of multiple cells with substantial surface area is maintained without significant degradation of breakthrough characteristics.