发明名称 |
Cold conductor contact metallisation - invovles use of titanium as protective layer or as layer for stop layer construction |
摘要 |
The employment of titanium as a stop layer construction for contact metallisation involves the application of a nickel layer as solderable diffusion stop. On the nickel layer is applied a protective layer of silver. Where a double layer metallisation is requierd, between the cold conductor and the titanium protective layer is applied an aluminium layer for stop layer construction. The titanium layer has a thickness of a few tenths of a micrometre. USE/ADVANTAGE - Titanium used as a protective layer for cold conductor contact metallisation.
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申请公布号 |
DE4130772(A1) |
申请公布日期 |
1993.04.29 |
申请号 |
DE19914130772 |
申请日期 |
1991.09.16 |
申请人 |
SIEMENS MATSUSHITA COMPONENTS GMBH & CO. KG, 8000 MUENCHEN, DE |
发明人 |
KARNER, ROBERT, GRAZ, AT |
分类号 |
C23C28/02;H01C1/14;H01C7/02 |
主分类号 |
C23C28/02 |
代理机构 |
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地址 |
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