Semiconductor laser device.

摘要

According to this invention, a semiconductor laser device includes a compound semiconductor substrate (11), a double hetero structure formed on the compound semiconductor substrate and having an active layer (14) and first and second cladding layers (13, 15) which interpose the active layer (14), a current blocking region (19) formed in one facet portion of the double hetero structure in a resonator direction. A reflecting layer (19) is arranged on the other facet of the double hetero structure in the resonator direction and has a reflectance higher than that of a natural cleavage surface, thereby shifting the oscillation wavelength of the laser device to a long wavelength side with respect to the wavelength of spontaneous radiation emitted from one facet of the double hetero structure. <IMAGE>