Isolated films using an air dielectric.

摘要

A method for isolating a film (64) from a substrate (50) includes the steps of: providing an N+ layer (52) on the substrate (50); forming an insulation layer (54) onto the N+ doped layer (52); etching a pair of trenches (56, 58) through the insulation layer (52) to thereby form an isolation region (60); laterally etching a cavity (62) underneath the isolation said region; and finally, forming the film (64) thereon. <IMAGE> <IMAGE>