| 摘要 |
<p>A phase-shifting mask (9), having plateau (12) and trench (14) surfaces located on a major surface of the mask, has a defect in the form of an indentation region (21) located on a plateau (or trench) surface. The mask is repaired with respect to the defect by spinning on the major surface of the mask a planarization layer (22) for which dry-etching conditions exist at which this planarization layer anisotropically etches at the same rate as that of the mask substrate material (10)--e.g., quartz. Then the portion (u) of the planarization layer overlying the defect is dry-etched under those conditions, using in one embodiment a patterned protective masking layer (23), such as chrome, having an aperture overlying the defect. This aperture need not be precisely laterally aligned with the defect (unless the defect extends to an edge of the plateau surface). The etching is continued until it reaches a depth H beneath the level of the plateau (or trench) surface that is equivalent to a phase shift of 2 nf radian, where n is an integer (preferably unity). <IMAGE></p> |
