发明名称 SEMICONDUCTOR ACCELERATION SENSOR AND METHOD FOR MANUFACTURING THE SAME
摘要 PURPOSE:To improve the impact resistance of the titled sensor by making a package dual structure. CONSTITUTION:If the acceleration acting on the centroid of the three weights of mass (m) is made (a), the force of f=ma is applied to the centroid, the displacement (x) of a cantilever beam 2 of a spring constant (k) is expressed by ma=kx, and the beam 2 balances at the position of the displacement (x) according to the acceleration (a), a strain is generated in the beam 2 by the displacement., and the value of gage resistance 4 changes according to the acceleration (a) due to the effect of the piezoresistance of a semiconductor when the gage resistance 4 is provided to the position where the strain is generated. The changed value is fetched to the outside of a package 7 through a wire 6 and the outside lead 5, and the acceleration is detected. The damage of the acceleration sensor is prevented, because an impact is absorbed by the package 8, and not direct transmitted to the beam 2, if the impact is applied from the outside.
申请公布号 JPH05107263(A) 申请公布日期 1993.04.27
申请号 JP19910296253 申请日期 1991.10.15
申请人 MITSUBISHI ELECTRIC CORP 发明人 TOMIOKA MASANORI;MIYOSHI MOTOHIDE
分类号 G01P15/12;G01P15/08;H01L29/84 主分类号 G01P15/12
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