发明名称 Method of making single layer personalization
摘要 A process for implementing logic units using base cells and implementing an electrical connection between the logic units in a gate array. The process includes determining a connection path between the base cells and connecting the base cells at the second metalization layer using a portion of the first metalization layer. This is possible due to the gate array having vertical first metalization layer segments of the first metalization layer positioned vertically in the channel between the rows of base cells, wherein each of the vertical segments has vias in the insulation layer between the first metalization layer and the second metalization layer at its endpoints for connecting the metalization layers. Similarly, the individual transistors which comprise the base cell are coupled using the second metalization layer to implement a specific logic unit.
申请公布号 US5206184(A) 申请公布日期 1993.04.27
申请号 US19910792586 申请日期 1991.11.15
申请人 SEQUOIA SEMICONDUCTOR, INC. 发明人 ALLEN, JOANNE M.;HANSEN, RICHARD B.;WOLSKI, GUNTRAM K.;VENES, KEITH R.
分类号 H01L23/528;H01L27/118 主分类号 H01L23/528
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