发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 A semiconductor memory device is provided with a memory portion, a logical operation circuit which receives the data signal read out from such memory portion and the input data signal to form data to be offered to such memory portion, and a gate circuit. In case a data input operation is required which eliminates the logical operation, the input data signal is fed not via the logical operation circuit, but via the gate circuit directly to the memory portion. The semiconductor memory device constructed as above permits a high speed operation and is suited for use as the memory for image processing.
申请公布号 US5206832(A) 申请公布日期 1993.04.27
申请号 US19910729337 申请日期 1991.07.12
申请人 HITACHI, LTD. 发明人 YAMAGUCHI, YASUNORI;MIYAKE, JUN
分类号 G11C7/00;G11C7/10;H04N5/907 主分类号 G11C7/00
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