| 摘要 |
A sense amplifier for a non-volatile semiconductor storage device includes a true and a complementary load circuit which are for holding the potentials of input signals and which have the current driving capability lower than that of each memory cell of the semiconductor storage device. These true and complementary load circuits are connected with a true and a complementary input terminal of the conventional sense amplifier. In accordance with the output logical value of the sense amplifier, if it is in the "H" level, the complementary load circuit is activated whereas if it is in the "L" level, the true load circuit is activated. In this way, the operation speed of the sense amplifier at a memory cell selecting operation can be effectively improved.
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