| 发明名称 |
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| 摘要 |
To etch through a several microns thick metal (eg copper) layer (18A) in a layered structure which comprises a polymer (eg polyimide) layer (12) as well as the metal layer, the metal layer is irradiated with one or more pulses of ultraviolet radiation having a wavelength in the range of 100 to 400 nm and an energy fluence per pulse (eg greater than 3J/cm<2>) which is such that the metal is removed at a rate at least twice as fast as that at which the polymer is removed. …<??>In particular, copper of a thickness less than 5 microns is rapidly etched in one or two pulses while adjacent polyimide layers are substantially unetched by the application of ultraviolet pulses of wavelengths 248-351 nm, at energy fluences per pulse in excess of approximately 3 J/cm<2>. |
| 申请公布号 |
JPH0528897(B2) |
申请公布日期 |
1993.04.27 |
| 申请号 |
JP19860176870 |
申请日期 |
1986.07.29 |
| 申请人 |
INTAANASHONARU BIJINESU MASHIINZU CORP |
发明人 |
JON JOSEFU DONERON;YAFUA TOMUKIIUITSUKUZU;TOOMASU ANSONII WASHITSUKU;JEEMUZU TEIENNCHENGU IE |
| 分类号 |
C23F1/00;C23F4/00;G03F7/004;G03F7/20;H01L21/268;H01L21/302;H01L21/311;H01L21/3213;H05K3/02 |
主分类号 |
C23F1/00 |
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