| 摘要 |
A field effect transistor comprises a current channel layer formed on an InP substrate through a buffer layer and formed of InGaAs having a lattice constant in match with that of InP, and a source electrode and a drain electrode formed on the current channel layer separately from each other and in ohmic contact with the current channel layer. An insulator layer is formed on the current channel layer between the source electrode and the drain electrode, and a gate electrode is formed on the insulator layer. The insulator layer being composed of a superlattice layer formed of alternately stacked undoped InAs thin films and undoped AlAs thin films. A ratio t1/t2 of the thickness t1 of each one InAs thin film and the thickness t2 of one AlAs thin film adjacent to the each one InAs thin film is gradually reduced toward to an upper surface of the superlattice layer.
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