| 摘要 |
PURPOSE:To realize a highly reliable device by obtaining a copper wiring structure body whose oxidation-resistant property is high. CONSTITUTION:A Ti film 13, a TiN film 14 and a copper film 15 are formed sequentially on a silicon substrate 11; after that, they are patterned. Then, the exposed surface of the copper film 15 is covered wholly with an Al film 16. A lamp annealing operation is executed at 450 deg.C for 60 seconds; Cu is reacted with Al; a CuAlX layer 17 is formed. When the CuAlX layer 17 is spin-coated with, e.g. SOG and a curing operation is executed at 400 deg.C, Al is bonded to oxygen, and an Al2O3 layer is formed on the surface so as to prevent the copper film 15 from being oxidized. As a result, a highly reliable wiring can be obtained. |
