PSEUDO-ONE-DIMENSIONAL FIELD-EFFECT TRANSISTOR AND ITS MANUFACTURE

摘要

PURPOSE:To provide a pseudo-one-dimensional field-effect transistor wherein its current amount per element surface area is large and its one-dimensional electron conduction can be expected even in an operation under a high electric field. CONSTITUTION:The title transistor is provided with the following: laminated semiconductor layers 11 which are formed on a semiinsulating GaAs substrate 8 so as to be divided into a plurality of stripe-shaped layers; a gate electrode 3 formed so as to come into contact with the surface of the semiinsulating GaAs substrate 8 on which the stripe-shaped laminated semiconductor layers 11 do not exist and which is exposed and with the side face as well as the surface of the laminated semiconductor layers 11; and a source electrode 1 as well as a drain electrode 2 which are formed so as to be separated from each other by sandwiching the gate electrode 3.