| 摘要 |
PURPOSE:To manufacture a semiconductor memory device readily and stably which has a trench type capacitor and realizes high integration and high density. CONSTITUTION:An insulating film is formed all over an Si substrate 1 wherein a trench 2 is formed, a resist is buried up to a middle of a depth of the trench 2, the insulating film is etched and removed using the resist as a mask and a contact part 9 is formed. Then, a polycrystalline Si film is formed all over, a part of the polycrystalline Si film excepting an element active region is oxidized to form an insulating film 8 for isolation and a part of the polycrystalline Si film within the trench 2 is made a storage node 11 of a capacitor. Thereby, it is possible to eliminate the need for mask alignment during formation of a contact part 9 since a photolithography process is not used and to reduce a design margin between the insulating film 8 and the trench 2. |
