| 摘要 |
PURPOSE:To shorten a time in manufacturing from a channel doping marking step to a completion step for a semiconductor device having a MOS-type transistor. CONSTITUTION:After a field insulating film 12 is formed on the surface of a semiconductor substrate 10, a MOS transistor is formed in a device hole of the insulating film 12. The MOS transistor comprises a field insulating film 14, a gate electrode layer 22, and source and drain regions 24S and 24D. An insulating film layer 25 is formed to cover the MOS transistor and the insulating film 12. Then, a resist layer 26, which has a first hole 26a for making a mark and a second hole 26b for ion implantation, is formed on the insulating layer 25. Impure ions are implanted selectively through the second hole 26b to the surface of the substrate, and thereby the channel characteristics are determined. Before or after this ion implantation step, the insulating layer 25 is etched selectively through the first hole 26a to form a marking part 26A. |
