| 摘要 |
PURPOSE:To easily perform pattern matching in a short time by finding a secondary electron image magnification error and a sample positioning error which maximize the degree of pattern matching when edge positions are varied according to the secondary image magnification precision, sample positioning precision, and wiring width expansion or reduction. CONSTITUTION:This pattern matching device is equipped with edge position detecting means 3, secondary electron image storage means 4, a projection brightness distribution generating means 5, edge degree detecting means 6, a pattern matching degree calculating means 7, and an error detecting means 8. An edge degree E(X) is found from the brightness distribution B(X) obtained by projecting a secondary electron image on an axis X and the degree V of pattern matching between the edge degree E(X) and linear edge positions X1 and i=1-(n) on a CAD data is found to find the secondary electron image magnification error and sample positioning error which maximize the degree of pattern matching when the edge positions X1 and i=1-(n) are varied according to the secondary electron image magnification precision, sample positioning precision, and wiring width expansion or reduction. |
