| 摘要 |
PURPOSE:To enhance the wiring life of an output signal conductor without sacrificing the packing density in a circuit with MOS transistors located at regular intervals. CONSTITUTION:When an output conductor is formed in a CMOS-structured semiconductor integrated circuit, the layout is designed in such a way that contact holes 19 are located at both ends of a through hole 17 in a drain electrode 15 of an N-channel MOS transistor 2 while contact holes 20 are located at both ends of a through hole 18 in a drain electrode 16 of a pitch MOS transistor. Since two current paths are provided from the through hole to the drain electrode, the current density in a conductor 22 can be reduced to about half its previous level without sacrificing the packing density. |
