| 摘要 |
PURPOSE:To obtain a thin type resin-sealed semiconductor device having no- mold-resin cracks resulting from poor adhesion between a die pad and mold resin, semiconductor die-cracks and the disconnection of bonding wire. CONSTITUTION:A semiconductor die 2 of 0.25mm in thickness is mounted ion a polyimide die pad 1 of 0.1mm in thickness. The whole circumference of the polyimide die pad 1 is supported by a die pad support 3. The die pad support 3 and a lead 5 consist of 42% Ni-Fe alloy and copper, and they are integrally molded by the use of a 25mm thick plate material by conducting a chemical etching treatment or a press working. The thickness of the mold resin on the upper side of the semiconductor die 2 is 15mm. Accordingly, a semiconductor device is formed in the thin type of 0.75mm.
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