| 摘要 |
PURPOSE:To remove the skirt of a resist pattern and to increase the contact area of a bump electrode with a substratum metal layer by a method wherein a resist which has been formed to be a pattern is ashed by means of a plasma, the bump electrode is formed on the pattern and the substratum metal layer is etched by making use of the bump electrode as a mask. CONSTITUTION:A semiconductor device is manufactured by forming a bump electrode on a chip. In this case, a substratum metal layer 3 is formed on the surface of a protective film 2 on an electrode 1, a photoresist is formed on the substratum metal layer 3, and a pattern is formed. Then, the resist which has been formed to be the pattern is ashed by means of a plasma; after that, the bump electrode is formed on the pattern, and the substratum metal layer 3 is etched by making use of the bump electrode as a mask. The resist 4a is patterned; after that, a semiconductor substrate is heated to about 100 deg.C from its rear; only a surface layer 4b on the resist 4a is removed by an ashing operation using the plasma of oxygen; the resist 4a from which the surface layer 4b has been removed is formed in such a way that a skirt part 5a is small. |
