发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 <p>PURPOSE:To easily break a large-area glass substrate, to reduce stress and strain which are caused by twisting on a semiconductor device being broken as far as possible and to enhance the yield and the reliability of the semiconductor device when, after a plurality of semiconductor device have been formed on the glass substrate, individual semiconductor devices are manufactured. CONSTITUTION:Scribing grooves 50 having a desired pattern are formed on a large-area glass substrate 13 on which semiconductor elements 10 have been formed; after that, the glass substrate 13 is immersed in a very-low-temperature liquid such as liquid nitrogen or the like; a thermal shock due to cooling is given; and the glass substrate 13 is broken along the scribing grooves 50.</p>
申请公布号 JPH05102302(A) 申请公布日期 1993.04.23
申请号 JP19910283692 申请日期 1991.10.02
申请人 KANEGAFUCHI CHEM IND CO LTD 发明人 KOBAYASHI KENJI;HAJIKI MASATO
分类号 H01L21/301;H01L21/78;H01L27/14;H01L31/10 主分类号 H01L21/301
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