发明名称 |
MANUFACTURE OF SEMICONDUCTOR DEVICE |
摘要 |
<p>PURPOSE:To easily break a large-area glass substrate, to reduce stress and strain which are caused by twisting on a semiconductor device being broken as far as possible and to enhance the yield and the reliability of the semiconductor device when, after a plurality of semiconductor device have been formed on the glass substrate, individual semiconductor devices are manufactured. CONSTITUTION:Scribing grooves 50 having a desired pattern are formed on a large-area glass substrate 13 on which semiconductor elements 10 have been formed; after that, the glass substrate 13 is immersed in a very-low-temperature liquid such as liquid nitrogen or the like; a thermal shock due to cooling is given; and the glass substrate 13 is broken along the scribing grooves 50.</p> |
申请公布号 |
JPH05102302(A) |
申请公布日期 |
1993.04.23 |
申请号 |
JP19910283692 |
申请日期 |
1991.10.02 |
申请人 |
KANEGAFUCHI CHEM IND CO LTD |
发明人 |
KOBAYASHI KENJI;HAJIKI MASATO |
分类号 |
H01L21/301;H01L21/78;H01L27/14;H01L31/10 |
主分类号 |
H01L21/301 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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