| 摘要 |
PURPOSE: To propose a new VLSI interconnection structure. CONSTITUTION: A via hole, line, or a recessed part 14 is provided in an insulator 16 containing oxygen that is made of silicon dioxide or polyimide in a VLSI interconnection structure 28 containing a copper conductive line 18, a copper alloy 30 is filled into the recessed part 14, and a thin-film layer 32 made of alloy element oxide is formed on the surface of the deposited copper alloy 30 and on the surface of an alloy part that is in contact with an insulator 16 containing oxygen. The oxide layer 32 is used as a diffusion barrier and/or an adhesive layer and a self-protection layer. As a result, the sectional area of the copper alloy 30 that can be used in the via hole, line, or recessed part 14 increases and the current conduction capacity of the line can be improved. |
