| 摘要 |
<p>PURPOSE:To obtain the wiring substrate for an ultrathin type semiconductor device by a method wherein a penetrating device hole is provided on a wiring substrate, and a semiconductor chip is mounted and fixed using a backing plate. CONSTITUTION:A through device hole 3 is provided on a wiring substrate 1, and a backing plate 4, which is larger than the device hole 3, is laminated. A semiconductor chip 5 is diebonded by a chip fixing bonding agent. At this time, when the material such as polyimide, polyether imide and the like, which can resist 100 deg.C or higher, is used for the backing plate 4, the wire bonding and the hardening of sealing resin at a high temperature can be made possible, and the improvement in bonding reliability and the selection of resin having high hardening temperature can be achieved. After a semiconductor chip 5 has been mounted and sealed, the backing plate 5 is removed. As a result, a proper thickness is formed by the height of the semiconductor chip 5 and the sealing resin 8, and a thin type semiconductor device can be obtained by thinning the above-mentioned thickness.</p> |
