| 摘要 |
<p>PURPOSE: To stabilize a light output efficiency and a mode adjustment, improve yield, and at the same time improve the reproducibility of an element by forming an LD array according to V-channel utilizing N-type GaAs substrate where a number of V-channels are formed. CONSTITUTION: An N-type GaAs substrate 11 is subjected to mesa etching and a number of V-channels are formed. When a GaAs layer where Si is doped is subjected to crystal formation by the MBE method, the V-channel surface becomes P type and the outer region of the V-channel surface becomes N type by utilizing that Si becomes a P-dopant on (111) A crystal surface and becomes an N-dopant on (100) crystal surface, thus achieving a laser diode array for GaAs current-limiting layers 13 and 15 for controlling the flow of electrons. In the current-limiting layers 13 and 15, the electrons cannot pass in the V- channel surface, thus controlling the electrons only to flow to a region between the V-channels. Beams outputted from each laser element are cross connected, and high-output characteristics are attained.</p> |
