| 摘要 |
PURPOSE:To prevent the erosion and the exfoliation of an electrode at the time of etching for eliminating the strain of a dicing surface, by covering the electrode with a layer of material which is not eroded by etching liquid. CONSTITUTION:A P-type electrode 23 is formed on the lower surface of an element main body constituted of P-type compound semiconductor 21 and N-type compound semiconductor 22. An N-side electrode 28 of four-layered structure is formed on the upper surface of the element main body. Said four-layered structure is formed by laminating the following in order; an ohmic contact layer 24, a first high melting point metal layer 25, a second high melting point metal layer 26, and an Au layer 27 of electrode metal. The Au layer 27 covers the side surfaces of the three layers under the layer 27, and is in contact with the upper surface of the element main body. That is, the whole part of the N-side electrode 28 is covered with the Au layer 27. Thereby the electrode can be prevented from being eroded at the time of wet etching for eliminating the strain of the dicing surface after dicing, and the exfoliation of the electrode can be prevented. |
