| 摘要 |
<p>PURPOSE:To form a highly reliable film transistor capable of progress into high performance, high mobility, low power consumption by simple process. CONSTITUTION:This transistor has a first interlayer insulating film 105 on the opposite side from a board 101, in contact with active region of a film transistor, and a second interlayer insulating film 110 is made after forming source and drain regions 108 on the first interlayer insulating film 105 in self alignment manner. Hereby, by the first interlayer insulating film 105 being made without the change of a mask, the diffusion of impurities from the second interlayer insulating film 110 to the active region or the dissociation of the hydrogen from the active region are suppressed, and also hydrogenation can be performed, and the progress into high performance and high mobility can be materialized.</p> |
