发明名称 |
Magnetostatic-wave circuit element incorporating sound-absorbent layer - produced e.g. by implantation of impurity ions into non-magnetic substrate to suppress lattice vibrations |
摘要 |
A thin YIG layer (3) over a large area (2a) of nonmagnetic liq.-phase-epitaxial GdGaG substrate (2) carries electrodes (5) 30 microns wide and 3 mm long. A resonator (6) 5 mm long, 2 mm wide and 0.5 mm thick is cut with a diamond blade from the wafer. The other large surface (2b) of monocrystalline GdGaG is coated with 10 microns of epoxy resin (8) to absorb the acoustic waves by internal friction. USE/ADVANTAGE - In e.g. thin-film garnet microwave oscillators, the spurious mode is suppressed over wide range of frequencies, and undesirable degradation of resonance properties is avoided.
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申请公布号 |
DE4234996(A1) |
申请公布日期 |
1993.04.22 |
申请号 |
DE19924234996 |
申请日期 |
1992.10.16 |
申请人 |
HITACHI METALS, LTD., TOKIO/TOKYO, JP |
发明人 |
MURAKAMI, YASUHIDE, KUMAGAYA, JP;ITO, KOHEI, FUKAYA, JP |
分类号 |
H01P1/215;H01P1/212;H03B5/18;H03H2/00;H03H9/25 |
主分类号 |
H01P1/215 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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