Circuit for generating a programming voltage for a programmable read-only memory, especially of an EPROM type, and method and memory relating to it.

摘要

Device (10) for generating a programming voltage (Vp) for a programmable permanent memory, especially of EPROM type, from an external DC voltage source (Vpp), comprising means (TA, TB, R1, R2, R3) for generating a reference voltage (Vs). This device (10) furthermore comprises means (20) for duplicating the said reference voltage (Vs), configured according to a voltage and current mirror structure and generating the programming voltage (Vp) as output, and a follower MOS transistor (12) whose drain and source are connected respectively to the external DC voltage source (Vpp) and to the output of the said duplicating means (20) and whose gate is connected to a predetermined internal node (N) of the said means (TA, TB, R1, R2, R3) for generating a reference voltage. Use in microelectronics, especially for EPROM memories. See Figure 2. <IMAGE>