| 摘要 |
<p>The disclosure relates to a plasma etch reactor comprising a remote source of plasma (100, 110) mounted on a vacuum processing chamber (102) having a large permanent magnet ring (130, 132) around the area of the chamber where the plasma enters, magnetically oriented so that magnetic field lines are removed from said plasma in the processing chamber. Two or more pairs of magnet rings (120, 122 ; 124, 126) are mounted around said chamber to form a series of magnetic cusps about the wall of said chamber, to inhibit plasma electrons from striking the wall. A substrate entry port (128) can be fitted between the magnet rings, allowing automatic ingress and egress of said substrates with maximum efficiency. <IMAGE></p> |
