Semicustom-made integrated circuit device with resistors over transistor array.

摘要

A semicustom-made integrated circuit device comprises a bipolar transistor array (12a/ 12b/ 12c/ 12d/ 12e) on a major surface of a silicon substrate (11) and a resistor array (16d) located over the transistor array, and the resistor array is formed from a highly resistive polysilicon film previously deposited on an inter-level oxide film sub-structure (17a/ 17b) covering the transistor array so that integration density of the bipolar transistors is increased without sacrifice of quick delivery. <IMAGE>