Method and apparatus for forming a very shallow impurity diffusion layer in a semiconductor substrate using a low frequency AC induced plasma.

摘要

A method of fabricating a semiconductor substrate is characterized in that a semiconductor wafer (5) is disposed between a pair of opposite electrodes (41, 42) provided in an atmosphere of inert gas containing impurity gas which is held at a low pressure, a low-frequency alternating current (3) is applied between the electrodes (41, 42) to induce plasma, and impurity ions are implanted into the surface of the semiconductor wafer (5) to form a very shallow impurity diffusion layer. <IMAGE>