| 摘要 |
PURPOSE:To provide a high characteristics semiconductor diffusion furnace member which is excellent in thermal shock resistance and contamination resistance, lightweight, and small in thermal capacity. CONSTITUTION:An SiC-permeable layer 3 as thick as 10-200mum is formed through a chemical evaporation method on the surface layer of a porous SiC- base body 2 250mum or below in average pore diameter and 12-70% in porosity, and a dense SiC-coating layer 4 over 10mum in thickness is formed on the surface of the permeable layer 3 through a chemical evaporation method. By this setup, an inner porous and surface dense SiC is formed, and furthermore the surface dense SiC coating layer and the porous SiC base body are firmly formed into an integral structure through the intermediary of an SiC permeable layer, so that a diffusion furnace member of this design is (1) very excellent in thermal shock resistance, (2) prevented from discharging impurities while it is in operation at a high temperature (diffusion barrier), (3) lightweight and excellent in handling properties, and (4) small in thermal capacity and easy to heat. |
