| 摘要 |
<p>PURPOSE:To speed up access time to e.g. 100ns level by speeding up a read operation of an EEPROM adapting a HAND cell structure or the like while stabilizing the operation. CONSTITUTION:A sense amplifier SA like the EEPROM is constituted of a ECL type or a cascode type differential amplifier circuit consisting of a bipolar circuit or a bipolar CMOS circuit. Dummy cells QD in multiples of normal memory cell QC are serially connected to the memory array MARY, and dummy bit line DB imparting a prescribed reference potential to the sense amplifier SA is provided. Thus, the amplification factor of the sense amplifier SA is remarkably raised, the amplification operation is speeded up, the stabilized reference potential is generated by means of a dummy bit line DB, and the operation of the sense amplifier SA is stabilized.</p> |
