| 摘要 |
<p>PURPOSE:To provide device that produces a conversion image with good resolution, a high S/N, and high infrared visible conversion efficiency, by using as a material infrared stimulated phosphor, consisting of a single or mixed crystal made of CaS, SrS, CaSe, and SrSe as a phosphor base material with the GaAs substrate. CONSTITUTION:An infrared stimulated phosphor layer 2 is formed on a GaAs substrate 1 in an infrared visible conversion device. In the infrared stimulated phosphor material, at least two elements Ce and Sm or at least two elements Ce and Sm, are added to the phosphor base material. In this case, a single or mixed crystal made of CaS, SrS, CaSe, and SrSe is used as the phosphor base material. While the substrate 1 is heated at temperatures above 300 deg.C and with gas partial pressure over 1X10-<8>Torr by a conducted H2S or H2Se gas, the infrared stimulated phosphor layer 2 is formed after a surface treatment step for the substrate 1 is carried out in a device manufacturing step.</p> |
