发明名称 SEMICONDUCTOR INTEGRATED CIRCUIT
摘要 PURPOSE:To reduce a power supply impedance of IC as much as possible by forming a power supply passing capacitor as nearer as possible to an IC power supply terminal, that is, on a power supply pad. CONSTITUTION:All electrostatic capacitance is achieved by forming a constitution to hold a ferroelectric material layer 11 with parallel flat electrodes with the adjacent power supply pad 9 of VDD and the power supply pad 10 of VSS. This electrostatic capacitance can be controlled with a shape of power supply pads, a dielectric constant and thickness of ferroelectric material layers, and moreover since this electrostatic capacitance may be formed in parallel in a number as many as the number of power supply pads for the power supply line, necessary electrostatic capacitance can be obtained. An impedance of the power supply line can be reduced by forming such electrostatic capacitances between the power supply pads VDD and VSS and thereby malfunction of IC resulting from external power supply noise can be prevented.
申请公布号 JPH0595084(A) 申请公布日期 1993.04.16
申请号 JP19910253770 申请日期 1991.10.01
申请人 SEIKO EPSON CORP 发明人 NAKAJIMA TAKAHIKO
分类号 H01L21/60;H01L21/822;H01L27/04 主分类号 H01L21/60
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