| 摘要 |
PURPOSE:To acquire a quantum fine line transistor which operates a low control gate voltage by providing a quantum fine line having triangular cross section formed physical-structurally and a controlling gate at one side of the quantum fine line. CONSTITUTION:A controlling gate 12 is provided to one side of a quantum fine line 11. When a negative bias voltage is applied to the controlling gate 12 of the quantum fine line 11 formed physical-structurally, electron is pushed away to a containment region 13 in opposition to the controlling gate 12 and not only contained in a vertical direction of a gate due to gate electric field but also contained in transverse direction due to configuration effect of a quantum line sidewall; effective line width of a quantum fine line thereby abruptly changes. Thereby, structure and state density of a sub-band abruptly change and operation is enabled by a low gate bias voltage. It becomes possible to change an effective line width of a quantum fine line abruptly and to operate it at a low gate bias voltage. |
