MULTILAYERED RESIST FORMING METHOD

摘要

PURPOSE:To provide a multilayered resist forming method for being able to form a pattern without contraction at a boundary face of a substrate or trailing of a skirt. CONSTITUTION:In a multilayered resist consisting of a silicon containing chemical amplification type resist being sensitive to light, X-ray or electron beam at an upper layer resist, an under layer resist in contact with an upper resist is made of an org. high molecular material layer not having hydroxy group to form multilayered resist. As an example of high molecular material, polyethylene or its derivatives or polyimide is cited. By this method, a fine resist pattern can be obtained.