发明名称 |
METHOD OF CASTING CRYSTALINE SILICON |
摘要 |
A polycrystalline silicon ingot is prepared by (1) coating quartz of carbon crucible with a slurry mixed silicon nitride powder containing small amount of calcium chloride with ultra pure water, (2) filling a raw silicon in a water free casting crucible, (3) dissolving the silicon by heating the bottom of the crucible to 1,450 deg.C, (4) solidifying by cooling at the rate of 0.5-8.0 deg.C/min. In the substitute of silicon nitride containing calcium chloride, calcium chloride can be filled and coated to protect the wall of quartz and carbon crucible.
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申请公布号 |
KR930002959(B1) |
申请公布日期 |
1993.04.16 |
申请号 |
KR19900016130 |
申请日期 |
1990.10.11 |
申请人 |
KOREA RESEARCH INSTITUTE FOR CHEMICAL TECHNOLOGY |
发明人 |
MUN, SANG - JIN;KIM, HUI - YONG;SO, WON - UK;YUN, KYONG - KU |
分类号 |
C01B33/02;(IPC1-7):C01B33/02 |
主分类号 |
C01B33/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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