| 摘要 |
PURPOSE:To obtain the process for production capable of making the total defect inspection of the photomask which has the same plural chip patterns disposed in a matrix form and is used for unmagnified exposure, and the photomask. CONSTITUTION:The chip patterns 3a exclusive of a part are formed by step-and- repeat projection using a 1st reticule and the central positions Aa thereof coincide with the lattice point B of a two-dimensional lattice constituting the matrix. A part of the chip patterns 3b are formed by the projection deviated in position from the step-and-repeat positions using a 2nd reticule having the same patterns as the patterns of the 1st reticule. The central positions Ab thereof deviate from the grating points B in the range where the peripheral edges do not bite into scribe line regions 4. The chip pattern 3b is selected by utilizing the positional deviation of the chip pattern 3b as one of the two chip patterns to be collated at the time of the total defect inspection. The other of the collation is the hatched chip pattern 3a. |
