发明名称 END-FACE LIGHT-EMITTING DIODE AND MANUFACTURING METHOD THEREOF
摘要 PURPOSE:To provide a structure for an end face light emitting device with high emission effect, and its manufacturing method. CONSTITUTION:A region 15 with an activated layer thicker than that of an activated layer 14 is formed on the rear side of the activated layer 14 other than the side facing to a light emitting end face 10. The region 14 with a thin activated layer serves as a light amplifying region and the region 15 with a thicker activated layer serves for confining the emitted light in the activated layer and providing it to the light amplifying region so that the power of the emitted light can be enhanced. After a current blocking layer 2A is removed, a groove formed thereon with varied widths so that a clad layer 3A, which is grown on the groove, is formed in a shape that is evenly at a narrow part, but is bent deeply at a wide part in the groove. Also the activated layer 4A formed thereon is bent deeply and grown thicker at a wide groove part, and thereby the thickness of the activated layer can be changed in regions. Consequently, the activated layers with different thicknesses can be simultaneously formed for different regions.
申请公布号 JPH0595133(A) 申请公布日期 1993.04.16
申请号 JP19910253403 申请日期 1991.10.01
申请人 MATSUSHITA ELECTRON CORP 发明人 SAWA KAZUHIRO;SEKI AKIRA
分类号 H01L33/10;H01L33/14;H01L33/24;H01L33/30;H01L33/44 主分类号 H01L33/10
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