| 摘要 |
<p>PURPOSE:To improve the resolution of a phase shift mask by forming phase inversion films and light shielding films on a surface having level differences and etching back these films, thereby forming the phase inversion regions and light shielding regions. CONSTITUTION:The 2nd light shielding film 16 is formed on a light transparent substrate 11. The 2nd film 15a of the phase shift material is formed on this 2nd light shielding film 16 and the 1st film 14a of the light shielding material is formed on this film 15a. The film 14a is etched back to allow only the level difference side wall of the film 14a to remain and to form the 1st light shielding film 14. The 1st film 13a of the phase shift material is formed on the film 15a having the 1st light shielding film 14 on the level difference side wall. The film 13a and the film 15a are etched back to allow the 1st phase shift film 13 to remain on the level difference side wall of the 1st light shielding film 14 and to form the light shielding region 12. The film 15a of the level difference side wall part of the 2nd light shielding film 16 is the 2nd phase shift film 15.</p> |
